Master Thesis: Comparative Analysis of 1200V Trench-Gate vs. Planar SiC MOSFETs for High-Frequency LLC Resonant Converte

Part of your life. Part of tomorrow.

We make life easier, safer and greener, with technology that achieves more, consumes less and is accessible to everyone. Microelectronics from Infineon is the key to a better future. Efficient use of energy, environmentally-friendly mobility and security in a connected world we solve some of the most critical challenges that our society faces while taking a conscientious approach to the use of natural resources. 1 Master Thesis: Comparative Analysis of 1200V Trench-Gate vs. Planar SiC MOSFETs for High-Frequency LLC Resonant Converte Job Description: In your new role you will: º Support laboratory activities, specifically evaluation and verificationtesting.

Location: Villach

Candidate Profile: You successfully meet the requirements, if you are a motivated and committed student from the field of Industrial Power Electronics or similar. You are best equipped for this task if you additionally offer: º Understanding power electronics and power conversion topologies/PCBlayout/Proficient in measurement using Oscilloscope. Lab experience isadvantage

This position is subject to the collective agreement for workers and employees in the electrical and electronics industry (full-time), employment group D for Master students (https://www.feei.at/wp-content/uploads/2024/04/minimum-salaries-white-collar-workers-2025.pdf%29.

Contact:

Infineon Technologies Austria AG - Student Recruiting

[email protected] Das Mindestentgelt für die Stelle als Master Thesis: Comparative Analysis of 1200V Trench-Gate vs. Planar SiC MOSFETs for High-Frequency LLC Resonant Converte beträgt 3.009,82 EUR brutto pro Monat auf Basis Vollzeitbeschäftigung.